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| NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD = -30dB Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Withstand Current (t = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.46W/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0 V(BR)CES IC = 50mA, VBE = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 50mA, IE = 0 V(BR)EBO IE = 1mA, IC = 0 ICES VCE = 12.5V, VBE = 0 20 40 40 4 - - - - - - - - - - 5 V V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Cob GPE Pout VCB = 12.5V, IE = 0, f = 1MHz Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz VCE = 12.5V, f = 30MHz Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz VCE = 12.5V, Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz - 15 200 pF hFE IC = 1A, VCE = 5V 10 35 - Symbol Test Conditions Min Typ Max Unit Functional Tests (VCC = 12.5V unless otherwise specified) Common-Emitter Amplifier Power Gain Power Output Collector Efficiency Intermodulation Distortion 12 20 45 - 15 - - -35 - - - -30 dB W % dB IMD Load Mismatch > 30:1 All Phase Angles .725 (18.42) .122 (3.1) Dia (2 Holes) C E .250 (6.35) B .225 (5.72) E .860 (21.84) .378 (9.56) Dia .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14) |
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